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Additional info for Advances in Electronics and Electron Phisics. Vol. 58
Further irradiation with VBr= + 5 V caused the device to monotonically increase in flat-band shift toward the right on this dashed curve. In summary, the approach to dynamic equilibrium conditions comes about by applying the new gate bias and then irradiating the device with an increment that is on the order of 1% of the total dose that the device has ever received. However, if the cumulative dose is less than approximately 1O8 rads, then the redistribution mechanism (to be discussed in Section IV) is incomplete and the 1% rule does not hold.
6 x x x x x lo7 lo7 lo7 lo8 10’ Time per point (set) 240 120 30 30 30 Furthermore, when one performs type 1 irradiations at + 6 and - 15 V, each with the same respective doses as indicated for points A, B, and C , then, once again the corresponding data points fall directly on top of the previous points for type 2 irradiations. (The locus of curves obtained by type 1 techniques is indicated by dashed lines in Fig. ) The data in Fig. 1 lc show the very high dose level case. As indicated in the figure, for these high-dose cases, Vgrcan be stepped back and forth over and over again without any observable change in structure or position of the curve.
Again begins to increase with each step (see Fig. 13a), the “safety margin” for dynamic equilibrium decreases, until at Vgr = + 4 V the device once again is pulled into the sloping segment of the device curves in Fig. 13b. This causes a kink to appear in the curve between segments e and f of Fig. 13c even though, as shown in Fig. 13a, the sequence of values of Vgrand D have both continued to increase in a uniform manner. The nondynamic equilibrium behavior exhibited in segment f would continue indefinitely if it were not for the sudden switch from positive to negative increments in gate-bias voltage occurring at Vgr = + 10 V and D = 27 units as shown in Fig.
Advances in Electronics and Electron Phisics. Vol. 58 by Author Unknown