By Peter W. Hawkes (Ed.)
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Extra info for Advances in Electronics and Electron Physics, Vol. 72
Coulombic Impurity States in Heterostructures Like in bulk materials, the substitutional coulombic impurities give rise to series of shallow donor or acceptor levels in semiconductor heterostructures. These levels have been thoroughly theoretically analyzed as well as their behaviour under the action of external perturbations (magnetic field, electric field, uniaxial stresses). In most of the III-V heterolayers, the dielectric mismatch between the host materials is small. If one neglects this mismatch, a substitutional coulombic 46 G.
1985) have shown how interband magneto-optics with an in-plane magnetic field provides a decisive test of the existence of superlattice bands along the growth axis of GaAs-Gal _,Al,As superlattices. Electron cyclotron resonances performed by Duffield ef al. (1986) on GaAs-Ga, -,Al,As superlattices have evidenced the anisotropy of the superlattice conduction band. The interpretation of these experiments have yielded the first determination of the electron effective mass along the growth direction.
This is because the off-diagonal terms in 2 + 6 2 prevent the light particle states to decouple from the heavy hold states at finite k,. However for I-,-related states, if well separated from the I-,-related ones, it is sensible to discard the 6 2 matrix. This allows the use of the same projection technique as outlined previously and to obtain for flat band heterostructures entirely analytical results. Let k, and kB denote the z projection of the carrier wave-vector in A and B layers. Then, we have: E(E + &A) 2h ( k i 3 =p + k:)P2 For a AB superlattice with period d(d = L A+ L,) the in-plane dispersion relations are (Bastard, 1981b, 1982, 1986): where: and where A*, A B have been set equal to infinity.
Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.)